IXFB44N100Q3 Series

DiscMSFT NChHiPerFET-Q3 Class TO-264(3)

Manufacturer: Littelfuse/Commercial Vehicle Products

Catalog

DiscMSFT NChHiPerFET-Q3 Class TO-264(3)

Part	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Vgs (Max)	Power Dissipation (Max)	Package / Case	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max) [Max]
Littelfuse/Commercial Vehicle Products IXFB44N100P	10 V	44 A	19000 pF	6.5 V	-55 °C	150 °C	N-Channel	1000 V	30 V	1250 W	TO-264-3 TO-264AA	PLUS264™	Through Hole	305 nC	220 mOhm	MOSFET (Metal Oxide)
Littelfuse/Commercial Vehicle Products IXFB44N100Q3	10 V	44 A	13600 pF	6.5 V	-55 °C	150 °C	N-Channel	1000 V	30 V		TO-264-3 TO-264AA	PLUS264™	Through Hole	264 nC	220 mOhm	MOSFET (Metal Oxide)	1560 W

Catalog

DiscMSFT NChHiPerFET-Q3 Class TO-264(3)

Key Features

• Low Rdsonper silicon area

• Low Qgand Qgd

• Excellent dV/dt performance

• High Speed Switching

• Fast intrinsic Rectifier

• Low Intrinsic Gate Resistance

• High Avalanche Energy Capabilities

• Excellent Thermal Performance

Description

The Q3-Class series Power MOSFETs provide the end-user with a broad range of devices that demonstrate exceptional power switching performance, excellent thermal characteristics, enhanced device ruggedness, and high energy efficiency. Available with drain-to-source voltage ratings of 200V–1000V and drain current ratings of 10A–100A, the Q3-Class series features an optimized combination of low on-state resistance (Rdson) and gate charge (Qg), resulting in a substantial reduction in both the conduction and switching loss of the device. Power switching capabilities and device ruggedness are further enhanced through the utilization of our proven HiPerFETTM process, yielding a device with a fast intrinsic rectifier which provides for low reverse recovery charge (Qrr) while enhancing the commutating dV/dt ratings (up to 50V/ns) of the device. Advantages: Easy to Mount High Power Density Space savings