CNY171M Series

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Catalog

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Part	Turn On / Turn Off Time (Typ)	Input Type	Number of Channels	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Current Transfer Ratio (Min) [Min]	Current - Output / Channel	Current - DC Forward (If) (Max) [Max]	Voltage - Output (Max) [Max]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Current Transfer Ratio (Max)	Mounting Type	Supplier Device Package	Voltage - Isolation	Vce Saturation (Max) [Max]	Voltage - Forward (Vf) (Typ)	Package / Case	Package / Case	Package / Case
ON Semiconductor CNY171SD	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-55 °C	40 %	50 mA	100 mA	70 V	1 µs	2 µs	80 %	Surface Mount	6-SMD	5300 Vrms	300 mV	1.35 V
ON Semiconductor CNY171FR2M	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY171SR2VM	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY171FM	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY171TM	2 µs 3 µs	DC	1	6-DIP	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Through Hole	6-DIP	4170 Vrms	400 mV	1.35 V	10.16 mm	10.16 mm
ON Semiconductor CNY171SM	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY171SM	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY1713SD	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-55 °C	40 %	50 mA	100 mA	70 V	1 µs	2 µs	80 %	Surface Mount	6-SMD	5300 Vrms	300 mV	1.35 V
ON Semiconductor CNY171FR2VM	2 µs 3 µs	DC	1	6-SMD Gull Wing	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Surface Mount	6-SMD	4170 Vrms	400 mV	1.35 V
ON Semiconductor CNY171M	2 µs 3 µs	DC	1	6-DIP	100 °C	-40 °C	40 %	50 mA	60 mA	70 V	4 µs	3.5 µs	80 %	Through Hole	6-DIP	4170 Vrms	400 mV	1.35 V		7.62 mm	0.3 in

Catalog

6-Pin DIP High BVCEO Phototransistor Output Optocoupler

Key Features

• High BVCEO: 70 V Minimum (CNY17XM, CNY17FXM, MOC8106M)

• Closely Matched Current Transfer Ratio (CTR)

• Minimizes Unit-to-Unit Variation

• Current Transfer Ratio In Select Groups

• Very Low Coupled Capacitance Along With No Chip-to-Pin 6 Base Connection for Minimum Noise Susceptability (CNY17FXM, MOC8106M)

• Safety and Regulatory Approvals:

• UL1577, 4,170 VACRMSfor 1 Minute

• DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage

Description

The CNY17XM, CNY17FXM and MOC810XM devices consist of a gallium arsenide infrared emitting diode coupled with an NPN phototransistor in a dual in-line package.