IRF520 Series
Manufacturer: INFINEON
Beta
⌘K
POWER MOSFET, N CHANNEL, 100 V, 9.7 A, 0.2 OHM, TO-220AB, THROUGH HOLE
| Part | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Package / Case | FET Type | Operating Temperature [Max] | Operating Temperature [Min] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Mounting Type | Vgs (Max) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | 25 nC | 200 mOhm | 48 W | 100 V | TO-220-3 | N-Channel | 175 °C | -55 °C | 9.7 A | 10 V | 4 V | 330 pF | TO-220AB | Through Hole | 20 V | MOSFET (Metal Oxide) |
 INFINEON | 25 nC | 200 mOhm | 3.8 W 48 W | 100 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | N-Channel | 175 °C | -55 °C | 9.7 A | 10 V | 4 V | 330 pF | D2PAK | Surface Mount | 20 V | MOSFET (Metal Oxide) |