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50 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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50 V, N-channel Trench MOSFET
50 V, N-channel Trench MOSFET
| Part | Technology | Mounting Type | FET Type | Package / Case | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Power Dissipation (Max) | Power Dissipation (Max) | Vgs (Max) [Max] | Current - Continuous Drain (Id) @ 25°C |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | Surface Mount | N-Channel | 3-XFDFN | 50 V | 0.7 nC | 150 °C | -55 °C | 30 pF | 900 mV | 2.8 Ohm | DFN0606-3 | 380 mW | 2.8 W | 8 V | 350 mA |