R6509KND3 Series
Manufacturer: Rohm Semiconductor
Beta
⌘K
HIGH-SPEED SWITCHING, NCH 650V 9A, TO-252 (DPAK), POWER MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | FET Type | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Supplier Device Package | Drain to Source Voltage (Vdss) | Technology | Operating Temperature | Package / Case | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 540 pF | 585 mOhm | 5 V | 10 V | 9 A | N-Channel | 20 V | 16.5 nC | Surface Mount | TO-252 | 650 V | MOSFET (Metal Oxide) | 150 °C | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 94 W |