YQ20BM10SDFH Series

Trench MOS Structure, 100V, 20A, TO-252 (DPAK), Highly Efficient SBD for Automotive

Catalog

Trench MOS Structure, 100V, 20A, TO-252 (DPAK), Highly Efficient SBD for Automotive

Part	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Mounting Type	Voltage - Forward (Vf) (Max) @ If	Grade	Package / Case	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Qualification
Rohm Semiconductor YQ20BM10SDFHTL	80 µA	200 mA 500 ns	TO-252	Surface Mount	860 mV	Automotive	DPAK (2 Leads + Tab) SC-63 TO-252-3	150 ¯C	100 V	Schottky	AEC-Q101

Catalog

Trench MOS Structure, 100V, 20A, TO-252 (DPAK), Highly Efficient SBD for Automotive

Description

The YQ20BM10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications. A miniaturized, thin and wireless TO-252 package.