SQP120 Series

Catalog

MOSFET N-CH 60V 120A TO220AB

Part	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Grade	Qualification	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]
Vishay General Semiconductor - Diodes Division SQP120N06-3M5L_GE3	TO-220AB	330 nC	Through Hole	2.5 V	250 W	60 V	4.5 V 10 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V	14700 pF	-55 °C	175 ░C	120 A	3.5 mOhm	Automotive	AEC-Q101
Vishay General Semiconductor - Diodes Division SQP120P06-6M7L_GE3	TO-220AB		Through Hole					TO-220-3							119 A
Vishay General Semiconductor - Diodes Division SQP120N10-09_GE3	TO-220AB	180 nC	Through Hole	3.5 V	375 W	100 V	10 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	120 A	9.5 mOhm	Automotive	AEC-Q101	8645 pF
Vishay General Semiconductor - Diodes Division SQP120N06-06_GE3	TO-220AB		Through Hole	3.5 V	175 W	60 V	10 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	20 V		-55 °C	175 ░C	119 A	6 mOhm	Automotive	AEC-Q101	6495 pF	145 nC
Vishay General Semiconductor - Diodes Division SQP120N06-6M7_GE3	TO-220AB		Through Hole					TO-220-3							119 A