IRLD110 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 100V 1A 4DIP
| Part | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 250 pF | 4-DIP (0.300" 7.62mm) | 4 V 5 V | Through Hole | 10 V | 2 V | 1.3 W | MOSFET (Metal Oxide) | -55 °C | 175 ░C | N-Channel | 100 V | 1 A | 540 mOhm |