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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Vgs (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Drain to Source Voltage (Vdss) | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 49 mOhm | 2.7 V | 20 V | 8.3 W 710 mW | 3.5 A | 450 pF | MOSFET (Metal Oxide) | Surface Mount | 13 nC | N-Channel | 4.5 V 10 V | TO-236AB | 60 V | SC-59 SOT-23-3 TO-236-3 | 175 °C | -55 °C |