8TQ080 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

DIODE SCHOTTKY 80V 8A TO263AB

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Mounting Type	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Voltage - Forward (Vf) (Max) @ If	Speed	Package / Case
Vishay General Semiconductor - Diodes Division VS-8TQ080STRLPBF	175 ░C	-55 C	TO-263AB (D2PAK)	500 pF	550 µA	Surface Mount	8 A	Schottky	80 V	720 mV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-8TQ080GSPBF	180 °C	-65 C	TO-263AB (D2PAK)	500 pF		Surface Mount	8 A	Schottky	80 V	720 mV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-8TQ080SPBF	175 ░C	-55 C	TO-263AB (D2PAK)	500 pF	550 µA	Surface Mount	8 A	Schottky	80 V	720 mV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-8TQ080PBF	175 ░C	-55 C	TO-220AC	500 pF	550 µA	Through Hole	8 A	Schottky	80 V	720 mV	200 mA 500 ns	TO-220-2
Vishay General Semiconductor - Diodes Division VS-8TQ080S-M3	175 ░C	-55 C	TO-263AB (D2PAK)	500 pF	550 µA	Surface Mount	8 A	Schottky	80 V	720 mV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division 8TQ080	175 ░C	-55 C	TO-220AC		550 µA	Through Hole	8 A	Schottky	80 V	720 mV	200 mA 500 ns	TO-220-2
Vishay General Semiconductor - Diodes Division VS-8TQ080STRL-M3	175 ░C	-55 C	TO-263AB (D2PAK)	500 pF	550 µA	Surface Mount	8 A	Schottky	80 V	720 mV	200 mA 500 ns	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB
Vishay General Semiconductor - Diodes Division VS-8TQ080-N3	180 °C	-65 C	TO-220AC			Through Hole	8 A	Schottky	80 V	720 mV	200 mA 500 ns	TO-220-2