SI4840 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 40V 19A 8SO
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Gate Charge (Qg) (Max) @ Vgs [Max] | FET Type | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Vgs(th) (Max) @ Id | Mounting Type | Technology | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 19 A | 4.5 V 10 V | 2000 pF | 50 nC | N-Channel | 9 mOhm | 2.5 W 6 W | 40 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 3 V | Surface Mount | MOSFET (Metal Oxide) | 8-SOIC | 20 V |
Vishay General Semiconductor - Diodes Division | 10 A | 4.5 V 10 V | N-Channel | 9 mOhm | 1.56 W | 40 V | -55 °C | 150 °C | 8-SOIC | 3.9 mm | 0.154 in | 3 V | Surface Mount | MOSFET (Metal Oxide) | 8-SOIC | 20 V |