Catalog
100 V, 10 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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100 V, 10 A PNP high power bipolar transistor
100 V, 10 A PNP high power bipolar transistor
| Part | Frequency - Transition | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Grade | Mounting Type | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Supplier Device Package | Qualification | Transistor Type | Operating Temperature | Voltage - Collector Emitter Breakdown (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 90 MHz | 1.5 W | 100 nA | Automotive | Surface Mount | 800 mV | 180 | SC-100 SOT-669 | LFPAK56 Power-SO8 | AEC-Q101 | PNP | 175 °C | 100 V |