FQAF11N90C Series

Power MOSFET, N-Channel, QFET®, 900 V, 7 A, 1.1 Ω, TO-3PF

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 7 A, 1.1 Ω, TO-3PF

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Rds On (Max) @ Id, Vgs	Vgs (Max)
ON Semiconductor FQAF11N90C	7 A	-55 °C	150 °C	TO-3P-3 Full Pack	120 W	3290 pF	Through Hole	TO-3PF	900 V	5 V	10 V	80 nC	MOSFET (Metal Oxide)	N-Channel	1.1 Ohm	30 V

Catalog

Power MOSFET, N-Channel, QFET®, 900 V, 7 A, 1.1 Ω, TO-3PF

Key Features

• 7.0A, 900V, RDS(on)= 1.1Ω(Max.) @VGS= 10 V, ID= 3.5A

• Low gate charge ( Typ. 60nC)

• Low Crss( Typ. 23pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.