IPB100N Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 40V 100A TO263-3

Part	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Grade	Operating Temperature [Max]	Operating Temperature [Min]	Vgs (Max)	Drain to Source Voltage (Vdss)	FET Type	Qualification	Technology	Package / Case	Mounting Type	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max) [Max]
INFINEON IPB100N04S2L03ATMA1	2 V	4.5 V 10 V	Automotive	175 °C	-55 °C	20 V	40 V	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	300 W	3 mOhm	6000 pF	230 nC	100 A	PG-TO263-3-2
INFINEON IPB100N04S204ATMA1	4 V	10 V	Automotive	175 °C	-55 °C	20 V	40 V	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	300 W	3.3 mOhm		172 nC	100 A	PG-TO263-3-2	5300 pF
INFINEON IPB100N06S3L-03	2.2 V	5 V 10 V	Automotive	175 °C	-55 °C	16 V	55 V	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	300 W	2.7 mOhm	26240 pF		100 A	PG-TO263-3-2		550 nC
INFINEON IPB100N06S2L05ATMA1	2 V	4.5 V 10 V	Automotive	175 °C	-55 °C	20 V	55 V	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	300 W	4.4 mOhm	5660 pF	230 nC	100 A	PG-TO263-3-2
INFINEON IPB100N06S3L-04	2.2 V	5 V 10 V	Automotive	175 °C	-55 °C	16 V	55 V	N-Channel	AEC-Q101	MOSFET (Metal Oxide)	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount		3.5 mOhm		362 nC	100 A	PG-TO263-3-2	17270 pF		214 W