TPN11006PL Series
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
Manufacturer: Toshiba Semiconductor and Storage
Catalog
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
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12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
12V - 300V MOSFETs, N-ch MOSFET, 60 V, 0.0114 Ω@10V, TSON Advance, U-MOSⅨ-H
| Part | Power Dissipation (Max) | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Operating Temperature | Drain to Source Voltage (Vdss) | Vgs (Max) | Technology | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 61 W | 610 mW | 26 A | 4.5 V 10 V | Surface Mount | 175 °C | 60 V | 20 V | MOSFET (Metal Oxide) | 17 nC | 8-TSON Advance (3.1x3.1) | N-Channel | 11.4 mOhm | 8-PowerVDFN | 1625 pF | 2.5 V |