SQ2301 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 20V 3.9A SOT23-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | Grade | Power Dissipation (Max) [Max] | Vgs (Max) | Mounting Type | Qualification | Supplier Device Package | FET Type | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8 nC | 20 V | Automotive | 3 W | 8 V | Surface Mount | AEC-Q101 | SOT-23-3 (TO-236) | P-Channel | 3.9 A | 1.5 V | MOSFET (Metal Oxide) | 120 mOhm | 2.5 V 4.5 V | 425 pF | -55 °C | 175 ░C | SC-59 SOT-23-3 TO-236-3 |