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30 V, N-channel Trench MOSFET
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Grade | Package / Case | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Qualification | Mounting Type | FET Type | Vgs (Max) | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | MOSFET (Metal Oxide) | 150 °C | -55 °C | Automotive | SC-59 SOT-23-3 TO-236-3 | 24 mOhm | 597 pF | AEC-Q101 | Surface Mount | N-Channel | 20 V | 30 V | 5.5 A | 2.5 V | 460 mW | 6.94 W | 18 nC | TO-236AB | 4.5 V 10 V |