IPD80R Series

Manufacturer: INFINEON

Catalog

MOSFET N-CH 800V 5.7A TO252-3

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Power Dissipation (Max)	Mounting Type	Technology	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs [Max]
INFINEON IPD80R1K0CEBTMA1	PG-TO252-3-11	5.7 A	950 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel	83 W	Surface Mount	MOSFET (Metal Oxide)	800 V	31 nC	150 °C	-55 °C	3.9 V	785 pF
INFINEON IPD80R360P7ATMA1	PG-TO252-3	13 A	360 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel		Surface Mount	MOSFET (Metal Oxide)	800 V	30 nC	150 °C	-55 °C	3.5 V	930 pF	84 W
INFINEON IPD80R2K8CEBTMA1	PG-TO252-3-11	1.9 A	2.8 Ohm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel	42 W	Surface Mount	MOSFET (Metal Oxide)	800 V		150 °C	-55 °C	3.9 V			12 nC	290 pF
INFINEON IPD80R280P7ATMA1	PG-TO252-3	17 A	280 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel		Surface Mount	MOSFET (Metal Oxide)	800 V	36 nC	150 °C	-55 °C	3.5 V	1200 pF	101 W
INFINEON IPD80R1K4CEBTMA1	PG-TO252-3-11	3.9 A		DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel	63 W	Surface Mount	MOSFET (Metal Oxide)	800 V	23 nC	150 °C	-55 °C	3.9 V				570 pF	1.4 Ohm
INFINEON IPD80R450P7ATMA1	PG-TO252-2	11 A	450 mOhm	DPAK (2 Leads + Tab) SC-63 TO-252-3	10 V	20 V	N-Channel	73 W	Surface Mount	MOSFET (Metal Oxide)	800 V		150 °C	-55 °C	3.5 V	770 pF		24 nC