SCT4062KWA Series

1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Catalog

1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Part	Technology	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	FET Type	Vgs(th) (Max) @ Id	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Vgs (Max) [Max]	Vgs (Max) [Min]	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type
Rohm Semiconductor SCT4062KWATL	SiC (Silicon Carbide Junction Transistor)	1498 pF	18 V	64 nC	81 mOhm	N-Channel	4.8 V	175 °C	24 A	21 V	-4 V	1.2 kV	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	Surface Mount

Catalog

1200V, 24A, 7-pin SMD, Trench-structure, Silicon-carbide (SiC) MOSFET

Description

SCT4062KWA is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.