GD25Q80 Series
Manufacturer: GigaDevice Semiconductor (HK) Limited
IC FLASH 8MBIT SPI/QUAD I/O 8SOP
| Part | Package / Case | Package / Case | Package / Case | Memory Interface | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Operating Temperature [Max] | Operating Temperature [Min] | Technology | Voltage - Supply [Max] | Voltage - Supply [Min] | Memory Size | Supplier Device Package | Memory Type | Memory Format | Clock Frequency | Mounting Type | Memory Organization | Access Time | Package / Case | Write Cycle Time - Word, Page |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GigaDevice Semiconductor (HK) Limited | 0.154 in | 8-SOIC | 3.9 mm | SPI - Quad I/O | 50 µs | 2.4 ms | 85 C | -40 ¯C | FLASH - NOR | 3.6 V | 2.7 V | 1024 KB | 8-SOP | Non-Volatile | FLASH | 120 MHz | Surface Mount | 1M x 8 | |||
GigaDevice Semiconductor (HK) Limited | 8-UDFN Exposed Pad | SPI - Quad I/O | 70 µs | 2 ms | 85 C | -40 ¯C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-USON (3x4) | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | ||||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | SPI - Quad I/O | 105 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-SOP | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 0.209 in 5.3 mm | 4 ms 140 µs | ||||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | SPI - Quad I/O | 105 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-SOP | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 0.209 in 5.3 mm | 4 ms 140 µs | ||||
GigaDevice Semiconductor (HK) Limited | 8-SOIC | SPI - Quad I/O | 60 µs | 4 ms | 105 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-SOP | Non-Volatile | FLASH | 80 MHz | Surface Mount | 1M x 8 | 7 ns | 0.209 in 5.3 mm | |||
GigaDevice Semiconductor (HK) Limited | 0.154 in | 8-SOIC | 3.9 mm | SPI - Quad I/O | 125 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-SOP | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 4 ms 140 µs | |||
GigaDevice Semiconductor (HK) Limited | 8-XFDFN Exposed Pad | SPI - Quad I/O | 125 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-USON (3x2) | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 4 ms 140 µs | |||||
GigaDevice Semiconductor (HK) Limited | 8-UDFN Exposed Pad | SPI - Quad I/O | 105 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-USON (3x4) | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 4 ms 140 µs | |||||
GigaDevice Semiconductor (HK) Limited | 8-WDFN Exposed Pad | SPI - Quad I/O | 105 °C | -40 °C | FLASH - NOR (SLC) | 3.6 V | 2.7 V | 1024 KB | 8-WSON (5x6) | Non-Volatile | FLASH | 133 MHz | Surface Mount | 1M x 8 | 7 ns | 4 ms 140 µs | |||||
GigaDevice Semiconductor (HK) Limited | 8-XFDFN Exposed Pad | SPI - Quad I/O | 50 µs | 2.4 ms | 85 C | -40 ¯C | FLASH - NOR | 3.6 V | 2.7 V | 1024 KB | 8-USON (2x3) | Non-Volatile | FLASH | 120 MHz | Surface Mount | 1M x 8 |