Catalog
40 V, 10 A PNP high power bipolar transistor
Description
AI
PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package.
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40 V, 10 A PNP high power bipolar transistor
40 V, 10 A PNP high power bipolar transistor
| Part | Mounting Type | Grade | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Package / Case | Transistor Type | Operating Temperature | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Frequency - Transition | Qualification | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | Surface Mount | Automotive | 240 | LFPAK56 Power-SO8 | 40 V | SC-100 SOT-669 | PNP | 175 °C | 100 nA | 1.3 W | 97 MHz | AEC-Q101 | 800 mV |