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60 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Power Dissipation (Max) | Technology | Qualification | Grade | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 20 V | 4.5 V 10 V | N-Channel | 77 mOhm | 2.7 V | 3.4 A 10.6 A | 305 pF | Surface Mount | 60 V | 9.2 nC | 175 °C | -55 °C | DFN2020MD-6 | 2 W 18.8 W | MOSFET (Metal Oxide) | AEC-Q101 | Automotive | 6-UDFN Exposed Pad |