HMC1114LP5DE Series

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

Manufacturer: Analog Devices Inc./Maxim Integrated

Catalog

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

Part	Supplier Device Package	Package / Case	Test Frequency	Current - Supply	Mounting Type	Gain	Frequency [Min]	Frequency [Max]	Voltage - Supply
Analog Devices Inc./Maxim Integrated HMC1114LP5DETR	32-LFCSP-CAV (5x5)	32-LFQFN Exposed Pad CSP	2.7 GHz	150 mA	Surface Mount	35 dBi	2.7 GHz	3.8 GHz	28 V

Catalog

10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz

Description

The HMC1114LP5DE is a gallium nitride (GaN), broadband power amplifier, delivering 10 W with more than 50% power added efficiency (PAE) across a bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114LP5DE provides ±0.5 dB gain flatness.The HMC1114LP5DE is ideal for pulsed or continuous wave (CW) applications such as wireless infrastructure, radar, public mobile radio, and general-purpose amplification.The HMC1114LP5DE is housed in a compact LFCSP_CAV package.ApplicationsExtended battery operation for public mobile radiosPower amplifier stage for wireless infrastructureTest and measurement equipmentCommercial and military radarsGeneral-purpose transmitter amplification