IRF820 Series

Manufacturer: Vishay General Semiconductor - Diodes Division

Catalog

MOSFET N-CH 500V 2.5A TO220AB

Part	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	FET Type	Vgs (Max)	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division IRF820	500 V	10 V	3 Ohm	360 pF	50 W	2.5 A	4 V	24 nC	MOSFET (Metal Oxide)	N-Channel	20 V	Through Hole	-55 °C	150 °C	TO-220-3	TO-220AB
Vishay General Semiconductor - Diodes Division IRF820A	500 V	10 V	3 Ohm	340 pF	50 W	2.5 A	4.5 V		MOSFET (Metal Oxide)	N-Channel	30 V	Through Hole	-55 °C	150 °C	TO-220-3	TO-220AB	17 nC
Vishay General Semiconductor - Diodes Division IRF820ALPBF	500 V	10 V	3 Ohm	340 pF	50 W	2.5 A	4.5 V		MOSFET (Metal Oxide)	N-Channel	30 V	Through Hole	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK	17 nC
Vishay General Semiconductor - Diodes Division IRF820PBF-BE3	500 V	10 V	3 Ohm	360 pF	50 W	2.5 A	4 V	24 nC	MOSFET (Metal Oxide)	N-Channel	20 V	Through Hole	-55 °C	150 °C	TO-220-3	TO-220AB
Vishay General Semiconductor - Diodes Division IRF820PBF	500 V	10 V	3 Ohm	360 pF	50 W	2.5 A	4 V	24 nC	MOSFET (Metal Oxide)	N-Channel	20 V	Through Hole	-55 °C	150 °C	TO-220-3	TO-220AB
Vishay General Semiconductor - Diodes Division IRF820LPBF	500 V	10 V	3 Ohm	360 pF		2.5 A	4 V	24 nC	MOSFET (Metal Oxide)	N-Channel	20 V	Through Hole	-55 °C	150 °C	I2PAK TO-262-3 Long Leads TO-262AA	I2PAK		3.1 W 50 W
Vishay General Semiconductor - Diodes Division IRF820S	500 V	10 V	3 Ohm	360 pF		2.5 A	4 V	24 nC	MOSFET (Metal Oxide)	N-Channel	20 V	Surface Mount	-55 °C	150 °C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	TO-263 (D2PAK)		3.1 W 50 W