SI7454 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 21A PPAK SO-8
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Technology | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Vgs (Max) | Supplier Device Package | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 21 A | 4.5 V 10 V | N-Channel | 19.5 nC | MOSFET (Metal Oxide) | Surface Mount | PowerPAK® SO-8 | 100 V | 33 mOhm | 20 V | PowerPAK® SO-8 | 4.1 W 29.7 W | -55 °C | 150 °C | 550 pF | 3 V |
Vishay General Semiconductor - Diodes Division | 5 A | 6 V 10 V | N-Channel | 30 nC | MOSFET (Metal Oxide) | Surface Mount | PowerPAK® SO-8 | 100 V | 34 mOhm | 20 V | PowerPAK® SO-8 | 1.9 W | -55 °C | 150 °C | 4 V | |
Vishay General Semiconductor - Diodes Division | 5 A | 6 V 10 V | N-Channel | 30 nC | MOSFET (Metal Oxide) | Surface Mount | PowerPAK® SO-8 | 100 V | 34 mOhm | 20 V | PowerPAK® SO-8 | 1.9 W | -55 °C | 150 °C | 4 V |