SIR826 Series

Catalog

MOSFET N-CH 80V 60A PPAK SO-8

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Package / Case	Technology	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max] [custom]
Vishay General Semiconductor - Diodes Division SIR826DP-T1-RE3	2.8 V	PowerPAK® SO-8	-55 °C	150 °C	104 W	20 V	4.8 mOhm	4.5 V 10 V	Surface Mount	90 nC	2900 pF	N-Channel	60 A	80 V	PowerPAK® SO-8	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIR826ADP-T1-GE3	2.8 V	PowerPAK® SO-8	-55 °C	150 °C	6.25 W 104 W	20 V		4.5 V 10 V	Surface Mount	86 nC	2800 pF	N-Channel	60 A	80 V	PowerPAK® SO-8	MOSFET (Metal Oxide)	5.5 mOhm
Vishay General Semiconductor - Diodes Division SIR826DP-T1-GE3	2.8 V	PowerPAK® SO-8	-55 °C	150 °C	6.25 W 104 W	20 V	4.8 mOhm	4.5 V 10 V	Surface Mount	90 nC	2900 pF	N-Channel	60 A	80 V	PowerPAK® SO-8	MOSFET (Metal Oxide)
Vishay General Semiconductor - Diodes Division SIR826LDP-T1-RE3	2.4 V	PowerPAK® SO-8	-55 °C	150 °C	5 W 83 W	20 V	5 mOhm	10 V	Surface Mount		3840 pF	N-Channel	21.3 A 86 A	80 V	PowerPAK® SO-8	MOSFET (Metal Oxide)		91 nC