MURT200 Series

Catalog

DIODE MODULE GP 100V 100A 3TOWER

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Package / Case	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Supplier Device Package	Speed	Voltage - Forward (Vf) (Max) @ If [Max]
GeneSiC Semiconductor MURT20010	75 ns	100 A	1 Pair Common Cathode	Three Tower	-55 °C	150 °C	Chassis Mount	100 V	Standard	Three Tower	200 mA 500 ns	1.3 V
GeneSiC Semiconductor MURT20040	90 ns	100 A	1 Pair Common Cathode	Three Tower	-55 °C	150 °C	Chassis Mount	400 V	Standard	Three Tower	200 mA 500 ns	1.35 V
GeneSiC Semiconductor MURT20010R	75 ns	100 A	1 Pair Common Anode	Three Tower	-55 °C	150 °C	Chassis Mount	100 V	Standard	Three Tower	200 mA 500 ns	1.3 V
GeneSiC Semiconductor MURT20005	75 ns	100 A	1 Pair Common Cathode	Three Tower	-55 °C	150 °C	Chassis Mount	50 V	Standard	Three Tower	200 mA 500 ns	1.3 V
GeneSiC Semiconductor MURT20060R	160 ns	100 A	1 Pair Common Anode	Three Tower	-55 °C	150 °C	Chassis Mount	600 V	Standard	Three Tower	200 mA 500 ns	1.7 V
GeneSiC Semiconductor MURT20040R	90 ns	100 A	1 Pair Common Anode	Three Tower	-55 °C	150 °C	Chassis Mount	400 V	Standard	Three Tower	200 mA 500 ns	1.35 V
GeneSiC Semiconductor MURT20060	160 ns	100 A	1 Pair Common Cathode	Three Tower	-55 °C	150 °C	Chassis Mount	600 V	Standard	Three Tower	200 mA 500 ns	1.7 V
GeneSiC Semiconductor MURT20005R	75 ns	100 A	1 Pair Common Anode	Three Tower	-55 °C	150 °C	Chassis Mount	50 V	Standard	Three Tower	200 mA 500 ns	1.3 V
GeneSiC Semiconductor MURT20020R	75 ns	100 A	1 Pair Common Anode	Three Tower	-55 °C	150 °C	Chassis Mount	200 V	Standard	Three Tower	200 mA 500 ns	1.3 V