NSS12100M3 Series

Low VCE(sat) Transistor, PNP, 12 V, 1.0 A

Catalog

Low VCE(sat) Transistor, PNP, 12 V, 1.0 A

Part	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Package / Case	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max) [Max]	Mounting Type
ON Semiconductor NSS12100M3T5G	-55 °C	150 °C	625 mW	SOT-723	120 hFE	SOT-723	1 A	PNP	12 V	410 mV	100 nA	Surface Mount

Catalog

Low VCE(sat) Transistor, PNP, 12 V, 1.0 A

Key Features

• High Continuous Current Capability

• Low VCE(sat)(typically 150mV at 500mA)

• Small Size 1.2 mm x 1.2 mm

• This is a Pb-Free Device

Description

Low VCE(sat)Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat)and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.