SI3586 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 20V 2.9A 6TSOP
| Part | Current - Continuous Drain (Id) @ 25°C | Configuration | Gate Charge (Qg) (Max) @ Vgs | Package / Case | FET Feature | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Power - Max [Max] | Mounting Type | Supplier Device Package | Rds On (Max) @ Id, Vgs | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2.1 A 2.9 A | N and P-Channel | 6 nC | SOT-23-6 Thin TSOT-23-6 | Logic Level Gate | 20 V | 1.1 V | 830 mW | Surface Mount | 6-TSOP | 60 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C |