RN2911 Series

Catalog

TRANS 2PNP PREBIAS 0.1W ES6

Part	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Package / Case	Transistor Type	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Qualification	Grade
Toshiba Semiconductor and Storage RN2911FE(TE85L,F)	100 mW	100 nA	120	Surface Mount	ES6	100 mA	200 MHz	SOT-563 SOT-666	2 PNP - Pre-Biased (Dual)	300 mV	50 V
Toshiba Semiconductor and Storage RN2911,LXHF(CT	200 mW	100 nA	120	Surface Mount	US6	100 mA	200 MHz	6-TSSOP SC-88 SOT-363	2 PNP - Pre-Biased (Dual)	300 mV	50 V	AEC-Q101	Automotive
Toshiba Semiconductor and Storage RN2911(T5L,F,T)	200 mW	100 nA	120	Surface Mount	US6	100 mA	200 MHz	6-TSSOP SC-88 SOT-363	2 PNP - Pre-Biased (Dual)	300 mV	50 V