SQJ479 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET P-CH 80V 32A PPAK SO-8
| Part | Vgs(th) (Max) @ Id | Qualification | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Drive Voltage (Max Rds On, Min Rds On) | Grade | FET Type | Vgs (Max) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 2.5 V | AEC-Q101 | 150 nC | PowerPAK® SO-8 | -55 °C | 175 ░C | 4500 pF | PowerPAK® SO-8 | 4.5 V 10 V | Automotive | P-Channel | 20 V | 33 mOhm | 32 A | 80 V | MOSFET (Metal Oxide) | 68 W | Surface Mount |