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P-Channel Enhancement Mode MOSFET
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P-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Technology | Power Dissipation (Max) [Max] | Supplier Device Package | Vgs (Max) | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Diodes Inc | 20 V | MOSFET (Metal Oxide) | 500 mW | SOT-323 | 12 V | 90 mOhm | 1 V | 1.8 V 4.5 V | 335 pF | 2.5 A | Surface Mount | -55 °C | 150 °C | P-Channel | SC-70 SOT-323 |