UCC27282-Q1 Series

Automotive 3-A, 120-V half bridge driver with 5-V UVLO, interlock and enable

Catalog

Automotive 3-A, 120-V half bridge driver with 5-V UVLO, interlock and enable

Part	Number of Drivers	Supplier Device Package	Input Type	Operating Temperature [Max]	Operating Temperature [Min]	Channel Type	Driven Configuration	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Qualification	Mounting Type	Gate Type	Grade	Logic Voltage - VIL, VIH [custom]	Logic Voltage - VIL, VIH [custom]	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	High Side Voltage - Max (Bootstrap) [Max]	Package / Case [y]	Package / Case [x]	Function	Type	Utilized IC / Part	Supplied Contents	Secondary Attributes	Logic Voltage - VIL, VIH
Texas Instruments UCC27282QDRCRQ1	2	10-VSON (3x3)	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	10-VFDFN Exposed Pad	16 V	5.5 V	12 ns	10 ns	AEC-Q100	Surface Mount	N-Channel MOSFET	Automotive	1.9 V	1.3 V
Texas Instruments UCC27282DRMR	2	8-VSON (4x4)	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	8-VDFN Exposed Pad	16 V	5.5 V	12 ns	10 ns		Surface Mount	N-Channel MOSFET		1.9 V	1.3 V	3 A	3 A	120 V
Texas Instruments UCC27282QDRCTQ1	2	10-VSON (3x3)	Non-Inverting	125 °C	-40 °C	Synchronous	Half-Bridge	10-VFDFN Exposed Pad	16 V	5.5 V	12 ns	10 ns	AEC-Q100	Surface Mount	N-Channel MOSFET	Automotive	1.9 V	1.3 V			120 V
Texas Instruments UCC27282D	2	8-SOIC	Non-Inverting	125 °C	-40 °C	Synchronous	Half-Bridge	8-SOIC	16 V	5.5 V	12 ns	10 ns		Surface Mount	MOSFET (N-Channel) N-Channel MOSFET		1.9 V	1.3 V			120 V	3.9 mm	0.154 in
Texas Instruments UCC27282EVM-335																								Gate Driver	Power Management	UCC27282	Board(s)	On-Board Test Points
Texas Instruments UCC27282QDRQ1	2	8-SOIC	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	8-SOIC	16 V	5.5 V	12 ns	10 ns	AEC-Q100	Surface Mount	N-Channel MOSFET	Automotive					120 V	3.9 mm	0.154 in						0.9 V 2.4 V
Texas Instruments UCC27282QDDARQ1	2	8-SOIC	Non-Inverting	125 °C	-40 °C	Synchronous	Half-Bridge	8-SOIC	16 V	5.5 V	12 ns	10 ns	AEC-Q100	Surface Mount	N-Channel MOSFET	Automotive	1.9 V	1.3 V			120 V	3.9 mm	0.154 in
Texas Instruments UCC27282DRCR	2	10-VSON (3x3)	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	10-VFDFN Exposed Pad	16 V	5.5 V	12 ns	10 ns		Surface Mount	N-Channel MOSFET						120 V								0.9 V 2.4 V
Texas Instruments UCC27282DRCT	2	10-VSON (3x3)	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	10-VFDFN Exposed Pad	16 V	5.5 V	12 ns	10 ns		Surface Mount	N-Channel MOSFET						120 V								0.9 V 2.4 V
Texas Instruments UCC27282DR	2	8-SOIC	Non-Inverting	125 °C	-40 °C	Independent	Half-Bridge	8-SOIC	16 V	5.5 V	12 ns	10 ns		Surface Mount	N-Channel MOSFET		1.9 V	1.3 V			120 V	3.9 mm	0.154 in

Key Features

• AEC-Q100 qualified with following resultsTemperature grade 1 (Tj= –40°C to 150°C)HBM ESD classification level 1BCDM ESD classification level C3Drives two N-channel MOSFETs in high-side low-side configuration5-V typical under voltage lockoutInput interlockEnable/disable functionality in DRC package16-ns typical propagation delay12-ns rise, 10-ns fall time with 1.8-nF load1-ns typical delay matchingAbsolute Maximum Negative Voltage Handling on Inputs (–5 V)Absolute Maximum Negative Voltage Handling on HS (–14 V)±3-A peak output currentAbsolute maximum boot voltage 120 VLow current (7-µA) consumption when disabledIntegrated bootstrap diodeFunctional Safety-CapableDocumentation available to aid functional safety system designAEC-Q100 qualified with following resultsTemperature grade 1 (Tj= –40°C to 150°C)HBM ESD classification level 1BCDM ESD classification level C3Drives two N-channel MOSFETs in high-side low-side configuration5-V typical under voltage lockoutInput interlockEnable/disable functionality in DRC package16-ns typical propagation delay12-ns rise, 10-ns fall time with 1.8-nF load1-ns typical delay matchingAbsolute Maximum Negative Voltage Handling on Inputs (–5 V)Absolute Maximum Negative Voltage Handling on HS (–14 V)±3-A peak output currentAbsolute maximum boot voltage 120 VLow current (7-µA) consumption when disabledIntegrated bootstrap diodeFunctional Safety-CapableDocumentation available to aid functional safety system design

Description

The UCC27282 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27282 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27282 -Q1 can be used in conjunction with both analog and digital controllers. The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. Input interlock further improves robustness and system reliability in high noise applications. The enable and disable functionality provides additional system flexibility by reducing power consumption by the driver and responds to fault events within the system. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27282 -Q1 is offered in a small package enabling high density designs. The UCC27282 -Q1 is a robust N-channel MOSFET driver with a maximum switch node (HS) voltage rating of 100 V. It allows for two N-channel MOSFETs to be controlled in half-bridge or synchronous buck configuration based topologies. Its 3-A peak source and sink current along with low pull-up and pull-down resistance allows the UCC27282 -Q1 to drive large power MOSFETs with minimum switching losses during the transition of the MOSFET Miller plateau. Since the inputs are independent of the supply voltage, UCC27282 -Q1 can be used in conjunction with both analog and digital controllers. The input pins as well as the HS pin are able to tolerate significant negative voltage, which improves system robustness. Input interlock further improves robustness and system reliability in high noise applications. The enable and disable functionality provides additional system flexibility by reducing power consumption by the driver and responds to fault events within the system. 5-V UVLO allows systems to operate at lower bias voltages, which is necessary in many high frequency applications and improves system efficiency in certain operating modes. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Under voltage lockout (UVLO) is provided for both the high-side and low-side driver stages forcing the outputs low if the VDD voltage is below the specified threshold. An integrated bootstrap diode eliminates the need for an external discrete diode in many applications, which saves board space and reduces system cost. UCC27282 -Q1 is offered in a small package enabling high density designs.