IRFIB6 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 600V 5.5A TO220-3
| Part | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Package / Case | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Technology | Vgs(th) (Max) @ Id | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 10 V 49 nC | 30 V | TO-220-3 | 600 V | -55 °C | 150 °C | 5.5 A | 10 V | N-Channel | TO-220-3 Full Pack Isolated Tab | 60 W | 1400 pF | 750 mOhm | MOSFET (Metal Oxide) | 4 V | Through Hole |