AS4 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 1KV 2.4A TO277A
| Part | Technology | Voltage - DC Reverse (Vr) (Max) [Max] | Speed | Speed | Reverse Recovery Time (trr) | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Package / Case | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Capacitance @ Vr, F | Mounting Type | Current - Reverse Leakage @ Vr | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | Avalanche | 1000 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 çA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 800 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 1.1 V | 60 pF | Surface Mount | 10 µA | AEC-Q101 | Automotive |
Vishay General Semiconductor - Diodes Division | Avalanche | 800 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 400 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 400 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 400 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 800 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 1000 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 çA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 1000 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 çA | ||
Vishay General Semiconductor - Diodes Division | Avalanche | 600 V | Standard Recovery >500ns | 200 mA | 1.8 µs | TO-277A (SMPC) | 175 ░C | -55 C | 3-PowerDFN TO-277 | 2.4 A | 962 mV | 60 pF | Surface Mount | 10 µA |