FQU20N06L Series

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 17.2 A, 42 mΩ, IPAK

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 17.2 A, 42 mΩ, IPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Rds On (Max) @ Id, Vgs [Max]	FET Type	Vgs(th) (Max) @ Id	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)
ON Semiconductor FQU20N06LTU	-55 °C	150 °C	Through Hole	13 nC	60 V	10 V	5 V	20 V	17.2 A	IPAK TO-251-3 Short Leads TO-251AA	60 mOhm	N-Channel	2.5 V	IPAK	MOSFET (Metal Oxide)	630 pF	2.5 W 38 W

Catalog

Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 17.2 A, 42 mΩ, IPAK

Key Features

• 17.2A, 60V, RDS(on)= 42mΩ(Max.) @VGS= 10 V, ID= 8.6A

• Low gate charge ( Typ. 9.5nC)

• Low Crss( Typ. 35pF)

• 100% avalanche tested

Description

This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.