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30 V, P-channel Trench MOSFET
Description
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P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, P-channel Trench MOSFET
30 V, P-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Package / Case | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Technology | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Rds On (Max) @ Id, Vgs | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 252 pF | 2.1 W 340 mW | 1.5 A | SC-59 SOT-23-3 TO-236-3 | 30 V | 2.5 V | 7.7 nC | 20 V | 4.5 V 10 V | Surface Mount | MOSFET (Metal Oxide) | 150 °C | -55 °C | TO-236AB | 120 mOhm | P-Channel |