SISA40 Series

Catalog

MOSFET N-CH 20V 43.7A/162A PPAK

Part	Technology	Drain to Source Voltage (Vdss)	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division SISA40DN-T1-GE3	MOSFET (Metal Oxide)	20 V	Surface Mount	3.7 W 52 W	10 V	2.5 V	PowerPAK® 1212-8	43.7 A 162 A	PowerPAK® 1212-8	3415 pF	N-Channel	1.5 V	-55 °C	150 °C	12 V	-8 V	1.1 mOhm	53 nC