SIHP11 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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MOSFET N-CH 800V 8A TO220AB
| Part | FET Type | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Mounting Type | Vgs (Max) | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Technology | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 42 nC | 8 A | 800 V | TO-220AB | Through Hole | 30 V | 4 V | 10 V | 804 pF | 78 W | -55 °C | 150 °C | TO-220-3 | MOSFET (Metal Oxide) | 450 mOhm |