SI5445 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET P-CH 8V 5.2A 1206-8
| Part | FET Type | Technology | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Mounting Type | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | P-Channel | MOSFET (Metal Oxide) | 1 V | 1.8 V 4.5 V | 5.2 A | 8 V | 21 nC | 8 V | Surface Mount | 1.3 W | -55 °C | 150 °C | 1206-8 ChipFET™ | 33 mOhm |