High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 3.1 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 3.1 Ω@10V, TO-220SIS, π-MOSⅧ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 900 V, 3.1 Ω@10V, TO-220SIS, π-MOSⅧ
| Part | Supplier Device Package | Power Dissipation (Max) | Operating Temperature | Package / Case | Drain to Source Voltage (Vdss) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | TO-220SIS | 40 W | 150 °C | TO-220-3 Full Pack | 900 V | 30 V | 10 V | N-Channel | 950 pF | Through Hole | 4 V | 3.1 Ohm | 20 nC | 4.5 A | MOSFET (Metal Oxide) |