TK560P65Y Series

Catalog

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 650 V, 0.56 Ω@10V, DPAK, DTMOSⅤ

Part	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	FET Type	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Vgs (Max)
Toshiba Semiconductor and Storage TK560P65Y,RQ	7 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	N-Channel	MOSFET (Metal Oxide)	60 W	650 V	560 mOhm	Surface Mount	14.5 nC	10 V	DPAK	380 pF	150 °C	30 V