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650V 11A TO-263, Low-noise Power MOSFET
Description
AI
R6511ENJ is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
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650V 11A TO-263, Low-noise Power MOSFET
650V 11A TO-263, Low-noise Power MOSFET
| Part | Drain to Source Voltage (Vdss) | Supplier Device Package | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | LPTS | N-Channel | 400 mOhm | 32 nC | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 124 W | 11 A | 10 V | Surface Mount | 4 V | 150 °C | 20 V | 670 pF | MOSFET (Metal Oxide) |