
Catalog
180 V, 1 A NPN high-voltage low VCEsat transistor
Description
AI
NPN high-voltage low VCEsattransistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

180 V, 1 A NPN high-voltage low VCEsat transistor
180 V, 1 A NPN high-voltage low VCEsat transistor
| Part | Qualification | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Grade | Frequency - Transition | Supplier Device Package | Operating Temperature | Transistor Type | Mounting Type | Current - Collector (Ic) (Max) [Max] | Package / Case | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | AEC-Q100 | 100 nA | 180 V | 50 | Automotive | 30 MHz | TO-236AB | 150 °C | NPN | Surface Mount | 1 A | SC-59 SOT-23-3 TO-236-3 | 50 mV |