Catalog
1200V, 20A, SMD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching. (Wide creepage distance, 3-pin package)
Beta
⌘K
1200V, 20A, SMD, Silicon-carbide (SiC) SBD
1200V, 20A, SMD, Silicon-carbide (SiC) SBD
| Part | Technology | Speed | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Package / Case | Voltage - Forward (Vf) (Max) @ If [Max] | Mounting Type | Supplier Device Package | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) [Max] | Operating Temperature - Junction |
|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | SiC (Silicon Carbide) Schottky | 500 mA | 1050 pF | 0 ns | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1.6 V | Surface Mount | TO-263L | 400 µA | 1.2 kV | 175 °C |