FQD5N50C Series

Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 Ω, DPAK

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 Ω, DPAK

Part	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	FET Type	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Mounting Type	Vgs(th) (Max) @ Id	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor FQD5N50CTM-WS	-55 °C	150 °C	625 pF	TO-252 (DPAK)	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 A	500 V	1.4 Ohm	N-Channel	2.5 W	24 nC	MOSFET (Metal Oxide)	Surface Mount	4 V	30 V	10 V

Catalog

Power MOSFET, N-Channel, QFET®, 500 V, 4 A, 1.4 Ω, DPAK

Key Features

• 4.0A, 500V, RDS(on)= 1.4Ω @VGS= 10 V

• Low gate charge (typical 18 nC)

• Low Crss (typical 15 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Description

These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.