Catalog
40 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Beta
⌘K
40 V, P-channel Trench MOSFET
40 V, P-channel Trench MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Drain to Source Voltage (Vdss) | Grade | Current - Continuous Drain (Id) @ 25°C | FET Type | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Mounting Type | Operating Temperature [Max] | Operating Temperature [Min] | Supplier Device Package | Vgs(th) (Max) @ Id | Technology | Qualification | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 450 pF | 20 V | 40 V | Automotive | 1.5 A | P-Channel | 6 nC | SC-59 SOT-23-3 TO-236-3 | 4.5 V 10 V | 240 mOhm | Surface Mount | 150 °C | -55 °C | TO-236AB | 2.5 V | MOSFET (Metal Oxide) | AEC-Q101 | 6.25 W 480 mW |