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12V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
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12V, N-channel Trench MOSFET
12V, N-channel Trench MOSFET
| Part | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) [Max] | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | FET Type | Power Dissipation (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Mounting Type | Package / Case | Technology | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Supplier Device Package [y] | Supplier Device Package [x] | Rds On (Max) @ Id, Vgs [Max] | Vgs(th) (Max) @ Id |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 1.5 V 4.5 V | 8 V | 4.7 A | 150 °C | -55 °C | N-Channel | 12.5 W | 400 mW | 335 pF | 12 V | Surface Mount | 4-XFBGA WLCSP | MOSFET (Metal Oxide) | 9 nC | 4-WLCSP | 0.78 | 0.78 | 42 mOhm | 900 mV |