SI3529 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N/P-CH 40V 2.5A 6TSOP
| Part | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Power - Max [Max] | Package / Case | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Technology | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N and P-Channel | 205 pF | 125 mOhm | 7 nC | Logic Level Gate | 1.95 A 2.5 A | 6-TSOP | 1.4 W | SOT-23-6 Thin TSOT-23-6 | Surface Mount | 3 V | 40 V | MOSFET (Metal Oxide) | -55 °C | 150 °C |