High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 300 V, 0.139 Ω@10V, TO-220SIS, π-MOSⅦ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 300 V, 0.139 Ω@10V, TO-220SIS, π-MOSⅦ
High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 300 V, 0.139 Ω@10V, TO-220SIS, π-MOSⅦ
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Technology | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Operating Temperature | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | N-Channel | 10 V | TO-220SIS | Through Hole | 2600 pF | MOSFET (Metal Oxide) | 139 mOhm | 18 A | TO-220-3 Full Pack | 60 nC | 3.5 V | 45 W | 300 V | 150 °C | 20 V |